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Dissimilar copper thick coexistence substrate

A high-current substrate suitable for miniaturized power devices!

The "Hybrid Copper Thickness Coexistence Substrate" is a high-current substrate that allows for the coexistence of 300μm thick copper foil and 70μm thin copper foil within the same layer, enabling switching between them. It achieves a reduction in assembly processes and component count, making it suitable for power devices represented by GaN and SiC, which are becoming more compact. 【Features】 ■ Switchable between 300μm and 70μm ■ 300μm and 70μm can be interwoven ■ Combination of copper inlays is possible *For more details, please download the PDF or feel free to contact us.

  • Printed Circuit Board

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